onsemi N-Channel MOSFET, 36 A, 650 V, 3-Pin TO-247 NTHL095N65S3HF
- RS Stock No.:
- 189-0439
- Mfr. Part No.:
- NTHL095N65S3HF
- Brand:
- onsemi
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 189-0439
- Mfr. Part No.:
- NTHL095N65S3HF
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 36 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 95 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 272 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±30 V | |
Width | 4.82mm | |
Typical Gate Charge @ Vgs | 66 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Length | 15.87mm | |
Forward Diode Voltage | 1.3V | |
Height | 20.82mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 95 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 272 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 4.82mm | ||
Typical Gate Charge @ Vgs 66 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 15.87mm | ||
Forward Diode Voltage 1.3V | ||
Height 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
SUPERFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 66 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 78 mΩ
Benefits
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Lower switching loss
Higher system reliability at low temperature operation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
Ultra Low Gate Charge (Typ. Qg = 66 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 78 mΩ
Benefits
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Lower switching loss
Higher system reliability at low temperature operation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
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