STMicroelectronics MOSFET, 3-Pin TO-220 STGP8NC60KD
- RS Stock No.:
- 188-8476
- Mfr. Part No.:
- STGP8NC60KD
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.71
(exc. VAT)
£12.85
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 16 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.071 | £10.71 |
| 100 - 490 | £0.855 | £8.55 |
| 500 - 990 | £0.833 | £8.33 |
| 1000 - 4990 | £0.811 | £8.11 |
| 5000 + | £0.791 | £7.91 |
*price indicative
- RS Stock No.:
- 188-8476
- Mfr. Part No.:
- STGP8NC60KD
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Minimum Gate Threshold Voltage | 4.5V | |
| Maximum Power Dissipation | 65 W | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Width | 4.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 2.1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.75mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Minimum Gate Threshold Voltage 4.5V | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Width 4.6mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 2.1V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.75mm | ||
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Lower on voltage drop (VCE(sat))
Very soft ultra fast recovery antiparallel diode
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Short circuit withstand time 10μs
Applications
High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
Very soft ultra fast recovery antiparallel diode
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Short circuit withstand time 10μs
Applications
High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
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