STMicroelectronics N-Channel MOSFET, 5 A, 650 V, 3-Pin IPAK STD5NM60T4

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£5.15

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£6.20

(inc. VAT)

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5 - 5£1.03£5.15
10 - 95£0.882£4.41
100 - 495£0.684£3.42
500 - 995£0.58£2.90
1000 +£0.482£2.41

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Packaging Options:
RS Stock No.:
188-8455
Mfr. Part No.:
STD5NM60T4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

650 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Length

6.6mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

2.4mm

Forward Diode Voltage

1.5V

Height

6.2mm

Minimum Operating Temperature

-55 °C

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performances.

Low input capacitance and gate charge
HIgh dv/dt and avalanche capabilities
Low gate input resistance
Applications
Switching applications

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