N-Channel MOSFET, 5 A, 650 V, 3-Pin IPAK STMicroelectronics STD5NM60T4
- RS Stock No.:
- 188-8290
- Mfr. Part No.:
- STD5NM60T4
- Brand:
- STMicroelectronics
Available to back order for despatch 01/10/2024
Added
Price Each (On a Reel of 2500)
£0.86
(exc. VAT)
£1.03
(inc. VAT)
| Units | Per unit | Per Reel* |
| 2500 + | £0.86 | £2,150.00 |
| *price indicative | ||
- RS Stock No.:
- 188-8290
- Mfr. Part No.:
- STD5NM60T4
- Brand:
- STMicroelectronics
Technical Reference
Legislation and Compliance
Product Details
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performances.
Low input capacitance and gate charge
HIgh dv/dt and avalanche capabilities
Low gate input resistance
Applications
Switching applications
HIgh dv/dt and avalanche capabilities
Low gate input resistance
Applications
Switching applications
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 96 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 2.4mm |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Length | 6.6mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Height | 6.2mm |
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