STMicroelectronics N-Channel MOSFET, 5 A, 650 V, 3-Pin IPAK STD5NM60T4
- RS Stock No.:
- 188-8290
- Mfr. Part No.:
- STD5NM60T4
- Brand:
- STMicroelectronics
Subtotal (1 reel of 2500 units)*
£1,905.00
(exc. VAT)
£2,285.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.762 | £1,905.00 |
*price indicative
- RS Stock No.:
- 188-8290
- Mfr. Part No.:
- STD5NM60T4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 96 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Width | 2.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 6.2mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Width 2.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 6.2mm | ||
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performances.
Low input capacitance and gate charge
HIgh dv/dt and avalanche capabilities
Low gate input resistance
Applications
Switching applications
HIgh dv/dt and avalanche capabilities
Low gate input resistance
Applications
Switching applications
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