STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2

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Subtotal (1 reel of 2500 units)*

£1,745.00

(exc. VAT)

£2,095.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.698£1,745.00

*price indicative

RS Stock No.:
188-8285
Mfr. Part No.:
STD11N60DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

10 A

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

420 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

6.2mm

Typical Gate Charge @ Vgs

16.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.6mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

2.17mm

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications

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