Vishay Dual N-Channel MOSFET, 197 (Channel 2) A, 76 (Channel 1) A, 30 (Channel 1) V, 30 (Channel 2) V, 8-Pin PowerPAIR

View all MOSFETs
Discontinued
Packaging Options:
RS Stock No.:
188-5009
Mfr. Part No.:
SiZF920DT-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

197 (Channel 2) A, 76 (Channel 1) A

Maximum Drain Source Voltage

30 (Channel 1) V, 30 (Channel 2) V

Package Type

PowerPAIR 6 x 5 F

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2 (Channel 2) V, 2.4 (Channel 1) V

Minimum Gate Threshold Voltage

1.1 (Channel 1) V, 1.1 (Channel 2) V

Maximum Power Dissipation

28 W, 74 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

+16 V, +20 V, -12 V, -16 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

19 nC @ 15 V (Channel 1), 83 nC @ 15 V (Channel 2)

Length

6.1mm

Number of Elements per Chip

2

Width

5.1mm

Height

0.7mm

Minimum Operating Temperature

-55 °C

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode.

TrenchFET® Gen IV power MOSFET
SkyFET® low-side MOSFET with integrated Schottky

Related links