Vishay Dual N-Channel MOSFET, 197 (Channel 2) A, 76 (Channel 1) A, 30 (Channel 1) V, 30 (Channel 2) V, 8-Pin PowerPAIR
- RS Stock No.:
- 188-4910
- Mfr. Part No.:
- SiZF920DT-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£753.00
(exc. VAT)
£903.00
(inc. VAT)
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.251 | £753.00 |
*price indicative
- RS Stock No.:
- 188-4910
- Mfr. Part No.:
- SiZF920DT-T1-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 197 (Channel 2) A, 76 (Channel 1) A | |
Maximum Drain Source Voltage | 30 (Channel 1) V, 30 (Channel 2) V | |
Package Type | PowerPAIR 6 x 5 F | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2 (Channel 2) V, 2.4 (Channel 1) V | |
Minimum Gate Threshold Voltage | 1.1 (Channel 1) V, 1.1 (Channel 2) V | |
Maximum Power Dissipation | 28 W, 74 W | |
Transistor Configuration | Dual | |
Maximum Gate Source Voltage | +16 V, +20 V, -12 V, -16 V | |
Width | 5.1mm | |
Number of Elements per Chip | 2 | |
Typical Gate Charge @ Vgs | 19 nC @ 15 V (Channel 1), 83 nC @ 15 V (Channel 2) | |
Maximum Operating Temperature | +150 °C | |
Length | 6.1mm | |
Height | 0.7mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 197 (Channel 2) A, 76 (Channel 1) A | ||
Maximum Drain Source Voltage 30 (Channel 1) V, 30 (Channel 2) V | ||
Package Type PowerPAIR 6 x 5 F | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2 (Channel 2) V, 2.4 (Channel 1) V | ||
Minimum Gate Threshold Voltage 1.1 (Channel 1) V, 1.1 (Channel 2) V | ||
Maximum Power Dissipation 28 W, 74 W | ||
Transistor Configuration Dual | ||
Maximum Gate Source Voltage +16 V, +20 V, -12 V, -16 V | ||
Width 5.1mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 19 nC @ 15 V (Channel 1), 83 nC @ 15 V (Channel 2) | ||
Maximum Operating Temperature +150 °C | ||
Length 6.1mm | ||
Height 0.7mm | ||
Minimum Operating Temperature -55 °C | ||
SkyFET® low-side MOSFET with integrated Schottky
Related links
- Vishay Dual N-Channel MOSFET 76 (Channel 1) A 30 (Channel 2) V, 8-Pin PowerPAIR
- Vishay TrenchFET Dual N-Channel MOSFET 30 V, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3
- Vishay Dual N-Channel MOSFET 40 V, 8-Pin PowerPAIR 6 x 5FS SIZF640DT-T1-GE3
- Vishay SiZ340ADT Dual N-Channel MOSFET 30 V, 8-Pin PowerPAIR 3 x 3 SiZ340ADT-T1-GE3
- Vishay Siliconix TrenchFET Dual N-Channel MOSFET 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3
- Vishay Siliconix TrenchFET Dual N-Channel MOSFET 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 30 V, 8-Pin PowerPAIR 6 x 5F SiZF928DT-T1-GE3