onsemi Dual MOSFET, 6-Pin TSOT-23 FDC3601N

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Subtotal 100 units (supplied on a continuous strip)*

£31.20

(exc. VAT)

£37.40

(inc. VAT)

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100 - 225£0.312
250 +£0.271

*price indicative

Packaging Options:
RS Stock No.:
186-8997P
Mfr. Part No.:
FDC3601N
Brand:
onsemi
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Brand

onsemi

Package Type

TSOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Power Dissipation

960 mW

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

1.0 A, 100 V
RDS(on) = 500 mΩ@ VGS = 10 V
RDS(on) = 550 mΩ @ VGS = 6 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.