onsemi P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NTR1P02LT1G
- RS Stock No.:
- 186-7202
- Mfr. Part No.:
- NTR1P02LT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 reel of 3000 units)*
£147.00
(exc. VAT)
£177.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,000 unit(s) ready to ship
- Plus 999,996,000 unit(s) shipping from 09 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.049 | £147.00 |
| 6000 - 9000 | £0.047 | £141.00 |
| 12000 - 15000 | £0.046 | £138.00 |
| 18000 - 21000 | £0.045 | £135.00 |
| 24000 + | £0.044 | £132.00 |
*price indicative
- RS Stock No.:
- 186-7202
- Mfr. Part No.:
- NTR1P02LT1G
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.3 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 350 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.25V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +12 V | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 3.1 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.01mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.3 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 350 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.25V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +12 V | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 3.1 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
Automotive Standard AEC-Q101 | ||
Height 1.01mm | ||
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