onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG
- RS Stock No.:
- 186-1352P
- Mfr. Part No.:
- NTMTS0D6N04CLTXG
- Brand:
- onsemi
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£53.60
(exc. VAT)
£64.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 21 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 198 | £2.68 |
| 200 - 998 | £2.325 |
| 1000 - 1998 | £2.045 |
| 2000 + | £1.86 |
*price indicative
- RS Stock No.:
- 186-1352P
- Mfr. Part No.:
- NTMTS0D6N04CLTXG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 554.5 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DFNW8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 660 μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 245.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 126 nC @ 4.5 V | |
| Width | 8mm | |
| Number of Elements per Chip | 1 | |
| Length | 8.1mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 554.5 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DFNW8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 660 μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 245.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 126 nC @ 4.5 V | ||
Width 8mm | ||
Number of Elements per Chip 1 | ||
Length 8.1mm | ||
Forward Diode Voltage 1.2V | ||
Height 1.15mm | ||
Minimum Operating Temperature -55 °C | ||
Non Compliant
Small Footprint (8x8 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free
Typical Applications
Power Tools, Battery Operated Vacuums
UAV/Drones, Material Handling
BMS/Storage, Home Automation
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free
Typical Applications
Power Tools, Battery Operated Vacuums
UAV/Drones, Material Handling
BMS/Storage, Home Automation