onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW8 NVMTS0D7N04CLTXG
- RS Stock No.:
- 185-9210P
- Mfr. Part No.:
- NVMTS0D7N04CLTXG
- Brand:
- onsemi
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£144.10
(exc. VAT)
£172.92
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 132 unit(s), ready to ship
Units | Per unit |
|---|---|
| 20 - 198 | £7.205 |
| 200 + | £6.245 |
*price indicative
- RS Stock No.:
- 185-9210P
- Mfr. Part No.:
- NVMTS0D7N04CLTXG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 433 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DFNW8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 630 μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 205 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 99 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 8.1mm | |
| Width | 8mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 433 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DFNW8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 630 μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 205 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 99 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Length 8.1mm | ||
Width 8mm | ||
Number of Elements per Chip 1 | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Non Compliant
- COO (Country of Origin):
- PH
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body