onsemi N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 NTR4170NT1G
- RS Stock No.:
- 184-1305P
- Mfr. Part No.:
- NTR4170NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£50.00
(exc. VAT)
£60.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,300 unit(s) shipping from 04 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 900 | £0.10 |
| 1000 + | £0.086 |
*price indicative
- RS Stock No.:
- 184-1305P
- Mfr. Part No.:
- NTR4170NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.4V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 480 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 4.76 nC @ 4.5 V | |
| Length | 3.04mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.01mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.4V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 480 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 4.76 nC @ 4.5 V | ||
Length 3.04mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.01mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET, 30V, ON Semiconductor
This is a 30 V N-Channel Power MOSFET.
Low rDS(on) to Minimize Conduction Loss
Low Gate Charge
Low Threshold Levels
Applications:
Power Converters for Portables
Battery Management
Load/Power Switch
Low Gate Charge
Low Threshold Levels
Applications:
Power Converters for Portables
Battery Management
Load/Power Switch
MOSFET Transistors, ON Semiconductor