onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SOT-523 NTE4153NT1G
- RS Stock No.:
- 184-1203P
- Mfr. Part No.:
- NTE4153NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£42.00
(exc. VAT)
£50.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,300 unit(s) ready to ship
- Plus 999,994,600 unit(s) shipping from 25 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 900 | £0.084 |
| 1000 + | £0.073 |
*price indicative
- RS Stock No.:
- 184-1203P
- Mfr. Part No.:
- NTE4153NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 915 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-523 (SC-89) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 950 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 300 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±6 V | |
| Width | 0.95mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 1.82 nC @ 4.5 V | |
| Length | 1.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.8mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 915 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-523 (SC-89) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 950 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±6 V | ||
Width 0.95mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 1.82 nC @ 4.5 V | ||
Length 1.7mm | ||
Maximum Operating Temperature +150 °C | ||
Height 0.8mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
Small Signal MOSFET 20V 915mA 230 mOhm Single N-Channel SC-89 with ESD Protection
Low RDS(on) Improving System Efficiency
Low Threshold Voltage, 1.5V Rated
ESD Protected Gate
Applications:
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
Low Threshold Voltage, 1.5V Rated
ESD Protected Gate
Applications:
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.