Diodes Inc Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 DMT6018LDR-13
- RS Stock No.:
- 182-7493
- Mfr. Part No.:
- DMT6018LDR-13
- Brand:
- DiodesZetex
Subtotal (1 pack of 10 units)*
£4.36
(exc. VAT)
£5.23
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 29,980 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
10 + | £0.436 | £4.36 |
*price indicative
- RS Stock No.:
- 182-7493
- Mfr. Part No.:
- DMT6018LDR-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 11.4 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | V-DFN3030 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 26 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 1.9 W | |
Maximum Gate Source Voltage | ±20 V | |
Maximum Operating Temperature | +150 °C | |
Length | 3.05mm | |
Number of Elements per Chip | 2 | |
Width | 3.05mm | |
Typical Gate Charge @ Vgs | 13.9 nC @ 10V | |
Height | 0.8mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.4 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type V-DFN3030 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.9 W | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.05mm | ||
Number of Elements per Chip 2 | ||
Width 3.05mm | ||
Typical Gate Charge @ Vgs 13.9 nC @ 10V | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch
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