Diodes Inc Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 DMT6018LDR-13

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Subtotal (1 reel of 10000 units)*

£3,560.00

(exc. VAT)

£4,270.00

(inc. VAT)

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  • 20,000 unit(s) shipping from 31 October 2025
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Per Reel*
10000 +£0.356£3,560.00

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RS Stock No.:
182-6931
Mfr. Part No.:
DMT6018LDR-13
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

60 V

Package Type

V-DFN3030

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.9 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

13.9 nC @ 10V

Number of Elements per Chip

2

Width

3.05mm

Length

3.05mm

Minimum Operating Temperature

-55 °C

Height

0.8mm

COO (Country of Origin):
CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch

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