Vishay TrenchFET N-Channel MOSFET, 8 A, 40 V, 3-Pin SOT-23 SQ2318AES-T1_GE3
- RS Stock No.:
- 180-8032
- Mfr. Part No.:
- SQ2318AES-T1_GE3
- Brand:
- Vishay
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- RS Stock No.:
- 180-8032
- Mfr. Part No.:
- SQ2318AES-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | SOT-23 | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.036 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.036 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 31mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 3W and continuous drain current of 8A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
Related links
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