Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3

RS Stock No.:: 180-7972
Mfr. Part No.:: SQJ457EP-T1_GE3
Brand:: Vishay

Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3

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Subtotal (1 pack of 20 units)*

£12.24

(exc. VAT)

£14.68

(inc. VAT)

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In Stock

2,720 unit(s) ready to ship

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Units	Per unit	Per Pack*
20 - 80	£0.612	£12.24
100 - 180	£0.459	£9.18
200 - 480	£0.405	£8.10
500 - 980	£0.394	£7.88
1000 +	£0.385	£7.70

*price indicative

RS Stock No.:: 180-7972
Mfr. Part No.:: SQJ457EP-T1_GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PowerPAK SO-8L
	Series	SQJ
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.025Ω
	Maximum Power Dissipation Pd	68W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Length	6.15mm
	Height	1.14mm
	Standards/Approvals	AEC-Q101
	Width	5.13 mm
	Number of Elements per Chip	1
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 60V
	Package Type PowerPAK SO-8L
	Series SQJ
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.025Ω
	Maximum Power Dissipation Pd 68W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Length 6.15mm
	Height 1.14mm
	Standards/Approvals AEC-Q101
	Width 5.13 mm
	Number of Elements per Chip 1
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• DC/DC primary switches

• Load switches

• Power management

Certifications

• AEC-Q101 qualified

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested