Vishay TrenchFET P-Channel MOSFET, 8 A, 30 V, 6-Pin TSOP-6 SI3421DV-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 20 units)*

£6.74

(exc. VAT)

£8.08

(inc. VAT)

Add to Basket
Select or type quantity
Being discontinued
  • Final 3,460 unit(s), ready to ship
Units
Per unit
Per Pack*
20 - 180£0.337£6.74
200 - 480£0.253£5.06
500 - 980£0.219£4.38
1000 - 1980£0.202£4.04
2000 +£0.158£3.16

*price indicative

Packaging Options:
RS Stock No.:
180-7895
Mfr. Part No.:
SI3421DV-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.0192 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Adaptor switch
• DC/DC converter
• For mobile computing/consumer
• Load switches

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested

Related links