Vishay Single 1 Type N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8

RS Stock No.:: 180-7355
Mfr. Part No.:: SIR882ADP-T1-GE3
Brand:: Vishay

Vishay Single 1 Type N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8

Subtotal (1 reel of 3000 units)*

£1,773.00

(exc. VAT)

£2,127.00

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 6,000 unit(s), ready to ship

Units	Per unit	Per Reel*
3000 +	£0.591	£1,773.00

*price indicative

RS Stock No.:: 180-7355
Mfr. Part No.:: SIR882ADP-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0087Ω
	Typical Gate Charge Qg @ Vgs	19.5nC
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	83W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Width	5.26 mm
	Height	1.12mm
	Length	6.25mm
	Standards/Approvals	No
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 100V
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0087Ω
	Typical Gate Charge Qg @ Vgs 19.5nC
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 83W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Width 5.26 mm
	Height 1.12mm
	Length 6.25mm
	Standards/Approvals No
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 8.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 60A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET for fast switching

Applications

• DC/DC primary side switch

• Industrial sites

• Telecom/server 48V, full/half-bridge DC/DC

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested