onsemi N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK FDD86250-F085
- RS Stock No.:
- 178-4442P
- Mfr. Part No.:
- FDD86250-F085
- Brand:
- onsemi
Subtotal 10 units (supplied on a continuous strip)*
£5.96
(exc. VAT)
£7.15
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 5,880 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 + | £0.596 |
*price indicative
- RS Stock No.:
- 178-4442P
- Mfr. Part No.:
- FDD86250-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 22 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
| Length | 6.73mm | |
| Forward Diode Voltage | 1.25V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 22 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Length 6.73mm | ||
Forward Diode Voltage 1.25V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- COO (Country of Origin):
- PH
N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 22 mΩ
Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20 A
Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A
UIS Capability
Applications:
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
End Products:
Integrated Starter/Alternator
Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A
UIS Capability
Applications:
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
End Products:
Integrated Starter/Alternator