onsemi N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 FCMT180N65S3
- RS Stock No.:
- 178-4240
- Mfr. Part No.:
- FCMT180N65S3
- Brand:
- onsemi
Stock information currently inaccessible
- RS Stock No.:
- 178-4240
- Mfr. Part No.:
- FCMT180N65S3
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | Power88 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 139 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 8mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Length | 8mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.05mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type Power88 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 139 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 8mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Length 8mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1.05mm | ||
- COO (Country of Origin):
- PH
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF)
Optimized Capacitance
Typ. RDS(on) = 152 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF)
Optimized Capacitance
Typ. RDS(on) = 152 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
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