onsemi N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 FCH125N65S3R0-F155

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Subtotal (1 tube of 30 units)*

£90.84

(exc. VAT)

£109.02

(inc. VAT)

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Per Tube*
30 +£3.028£90.84

*price indicative

RS Stock No.:
178-4239
Mfr. Part No.:
FCH125N65S3R0-F155
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

181 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.82mm

Length

15.87mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

20.82mm

COO (Country of Origin):
CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ TJ = 150 oC
Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
Ultra Low Gate Charge (Typ. Qg = 46 nC)
Optimized Capacitance
Typ. RDS(on) = 105 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
UPS / Solar
LED Lighting / Ballast

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