Vishay Siliconix TrenchFET Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8 SQJ872EP-T1_GE3
- RS Stock No.:
- 178-3903
- Mfr. Part No.:
- SQJ872EP-T1_GE3
- Brand:
- Vishay Siliconix
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£9.60
(exc. VAT)
£11.50
(inc. VAT)
FREE delivery for orders over £60.00
Limited stock
- Plus 2,920 left, shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.96 | £9.60 |
| 100 - 490 | £0.815 | £8.15 |
| 500 - 990 | £0.72 | £7.20 |
| 1000 + | £0.624 | £6.24 |
*price indicative
- RS Stock No.:
- 178-3903
- Mfr. Part No.:
- SQJ872EP-T1_GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24.5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 55W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.99mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24.5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 55W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5.99mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
Related links
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJA76EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 200 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SQJ481EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 200 V Enhancement, 8-Pin SO-8 SQJ431AEP-T1_GE3