Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3
- RS Stock No.:
- 178-3903
- Mfr. Part No.:
- SQJ872EP-T1_GE3
- Brand:
- Vishay Siliconix
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£9.60
(exc. VAT)
£11.50
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- 2,920 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.96 | £9.60 |
| 100 - 490 | £0.815 | £8.15 |
| 500 - 990 | £0.72 | £7.20 |
| 1000 + | £0.624 | £6.24 |
*price indicative
- RS Stock No.:
- 178-3903
- Mfr. Part No.:
- SQJ872EP-T1_GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24.5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SQJ872EP | |
| Package Type | SO-8L | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0395Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 55W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Width | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24.5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SQJ872EP | ||
Package Type SO-8L | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0395Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 55W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 175°C | ||
Length 5.99mm | ||
Height 1.07mm | ||
Width 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Vishay Siliconix SQJ872EP Series MOSFET, 150V Drain Source Voltage, 24.5A Maximum Continuous Drain Current - SQJ872EP-T1_GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching in demanding electronic systems. It operates within a wide temperature range suitable for automotive-class applications and is supplied in a Compact SO-8L package for PCB mounting. The device is intended for circuits requiring robust current handling and efficient switching at elevated voltages.
Features and Benefits:
• 150V drain rating enables high-voltage switching applications
• 24.5A continuous drain current supports heavy-load operation
• 0.0395Ω Rds(on) reduces conduction losses for improved efficiency
• 14nC typical gate charge ensures responsive switching behaviour
• 55W power dissipation allows sustained thermal loading
• 20V gate tolerance permits flexible gate-drive voltages
• 24.5A continuous drain current supports heavy-load operation
• 0.0395Ω Rds(on) reduces conduction losses for improved efficiency
• 14nC typical gate charge ensures responsive switching behaviour
• 55W power dissipation allows sustained thermal loading
• 20V gate tolerance permits flexible gate-drive voltages
Applications
• Suitable for automotive power distribution modules requiring high-voltage switching
• Ideal for DC-DC converters in industrial automation systems
• Used for motor-drive stages in electrical and mechanical equipment
• Can be used for power supply switching in telematics and control units
• Ideal for DC-DC converters in industrial automation systems
• Used for motor-drive stages in electrical and mechanical equipment
• Can be used for power supply switching in telematics and control units
What mounting method should be used for reliable assembly?
The device is intended for PCB mounting in an SO-8L footprint to ensure stable electrical and thermal contact.
How does the device perform under wide temperature extremes?
It is rated to operate from -55°C up to 175°C, accommodating harsh thermal environments encountered in automotive and industrial settings.
Which characteristics affect switching losses most directly?
Switching losses are influenced by the typical gate charge of 14nC and the combination of Rds(on) with drain voltage during transitions.
How many pins are available for circuit connections?
The package provides eight pins to accommodate standard SO-8L PCB layouts and routing requirements.
Related links
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJA76EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 200 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SQJ481EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ415EP-T1_GE3