Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Length

5mm

Number of Elements per Chip

1

Width

6.29mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

3.37mm