Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin TO-220FP IRFI9610GPBF
- RS Stock No.:
- 178-0862
- Mfr. Part No.:
- IRFI9610GPBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£72.30
(exc. VAT)
£86.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 50 unit(s) ready to ship
- Plus 999,999,900 unit(s) shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £1.446 | £72.30 |
100 - 200 | £1.359 | £67.95 |
250 - 450 | £1.229 | £61.45 |
500 - 1200 | £1.156 | £57.80 |
1250 + | £1.084 | £54.20 |
*price indicative
- RS Stock No.:
- 178-0862
- Mfr. Part No.:
- IRFI9610GPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 2 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-220FP | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 27 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Height | 9.8mm | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 27 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 9.8mm | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
Dynamic dV/dt rating
Low thermal resistance
Low thermal resistance
MOSFET Transistors, Vishay Semiconductor
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