Vishay P-Channel MOSFET, 11 A, 200 V, 3-Pin TO-220AB IRF9640PBF

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Subtotal (1 tube of 50 units)*

£52.25

(exc. VAT)

£62.70

(inc. VAT)

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Temporarily out of stock
  • 1,000 unit(s) shipping from 31 October 2025
  • Plus 1,000 unit(s) shipping from 04 March 2026
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Units
Per unit
Per Tube*
50 - 50£1.045£52.25
100 - 200£0.993£49.65
250 +£0.941£47.05

*price indicative

RS Stock No.:
178-0817
Mfr. Part No.:
IRF9640PBF
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

44 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10.41mm

Minimum Operating Temperature

-55 °C

Height

9.01mm

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements


MOSFET Transistors, Vishay Semiconductor

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