Microchip 2N6661 N-Channel MOSFET, 350 mA, 90 V, 3-Pin TO-39 2N6661

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£5,340.00

(exc. VAT)

£6,410.00

(inc. VAT)

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RS Stock No.:
177-9587
Mfr. Part No.:
2N6661
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

90 V

Package Type

TO-39

Series

2N6661

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

6.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

9.398 Dia.mm

Height

6.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Microchip Technology MOSFET


The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 90V and a maximum gate-source voltage of 20V. It has drain-source resistance of 4ohms at a gate-source voltage of 10V. It has continuous drain current of 350mA and maximum power dissipation of 6.25W. The minimum and a maximum driving voltage for this MOSFET is 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Ease of paralleling
• Excellent thermal stability
• Free from secondary breakdown
• High input impedance and high gain
• Integral source drain diode
• Low CISS and fast switching speeds
• Low power drive requirement
• Operating temperature ranges between -55°C and 150°C

Applications


• Amplifiers
• Converters
• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
• Motor controls
• Power supply circuits
• Switches

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007

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