ROHM R6509KNJ N-Channel MOSFET, 9 A, 650 V, 3-Pin D2PAK R6509KNJTL

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RS Stock No.:
177-6332
Mfr. Part No.:
R6509KNJTL
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Package Type

TO-263S

Series

R6509KNJ

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

580 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

9.2mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

16.5 nC @ 10 V

Length

10.4mm

Height

4.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

RoHS Status: Not Applicable

COO (Country of Origin):
JP
R6509KNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

Low on-resistance
Ultra fast switching speed
Parallel use is easy
Pb-free plating

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