onsemi NTH027N65S3F N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155
- RS Stock No.:
- 172-3437P
- Mfr. Part No.:
- NTH027N65S3F-F155
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£143.80
(exc. VAT)
£172.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 99 | £14.38 |
| 100 + | £12.47 |
*price indicative
- RS Stock No.:
- 172-3437P
- Mfr. Part No.:
- NTH027N65S3F-F155
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | NTH027N65S3F | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 27.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 595 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.87mm | |
| Typical Gate Charge @ Vgs | 259 nC @ 10 V | |
| Width | 4.82mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.3V | |
| Height | 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series NTH027N65S3F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 27.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 595 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 15.87mm | ||
Typical Gate Charge @ Vgs 259 nC @ 10 V | ||
Width 4.82mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Height 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
This PIN diode is designed to realize compact and efficient designs. Two PIN diodes are incorporated in one SC-70 package. The use of dual PIN diodes can reduce both system cost and board space. This PIN diode is PPAP capable for automotive applications.
PPAP capable
Suitable for Automotive Applications
Pb-Free and Halogen Free
Environmental Consideration
Series connection of 2 elements in a small-size package
Improving the mounting efficiency greatly.
MCP3 package is pin-compatible with SC-70
Substitution from SC-70 is possible
Small Interterminal Capacitance (C = 0.23 pF typ)
Suitable for Level detector
Small Forward Series Resistance (rs = 4.5 Ω max)
Suitable for UHF band
Auto Gain Control for Automotive Radio Antenna
Automotive Antenna
Automotive Radio Tuner
Suitable for Automotive Applications
Pb-Free and Halogen Free
Environmental Consideration
Series connection of 2 elements in a small-size package
Improving the mounting efficiency greatly.
MCP3 package is pin-compatible with SC-70
Substitution from SC-70 is possible
Small Interterminal Capacitance (C = 0.23 pF typ)
Suitable for Level detector
Small Forward Series Resistance (rs = 4.5 Ω max)
Suitable for UHF band
Auto Gain Control for Automotive Radio Antenna
Automotive Antenna
Automotive Radio Tuner