Dual N-Channel MOSFET, 2 A, 100 V, 8-Pin TSMT-8 ROHM QH8K51TR

RS Stock No.:: 172-0345
Mfr. Part No.:: QH8K51TR
Brand:: ROHM

Dual N-Channel MOSFET, 2 A, 100 V, 8-Pin TSMT-8 ROHM QH8K51TR

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Price Each (On a Reel of 3000)

£0.374

(exc. VAT)

£0.449

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	£0.374	£1,122.00

*price indicative

RS Stock No.:: 172-0345
Mfr. Part No.:: QH8K51TR
Brand:: ROHM

Datasheet
ESD Control Selection Guide V1

RS Stock No.:: 172-0345
Mfr. Part No.:: QH8K51TR
Brand:: ROHM

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2 A
Maximum Drain Source Voltage	100 V
Package Type	TSMT-8
Series	QH8K51
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	355 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.5 W
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	3.1mm
Typical Gate Charge @ Vgs	4.7 nC @ 5 V
Width	2.5mm
Height	0.8mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2 A
Maximum Drain Source Voltage	100 V
Package Type	TSMT-8
Series	QH8K51
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	355 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.5 W
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	3.1mm
Typical Gate Charge @ Vgs	4.7 nC @ 5 V
Width	2.5mm
Height	0.8mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

Dual N-Channel MOSFET, 2 A, 100 V, 8-Pin TSMT-8 ROHM QH8K51TR

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