onsemi NTTFS4C02N N-Channel MOSFET, 29 A, 30 V, 8-Pin WDFN NTTFS4C02NTAG
- RS Stock No.:
- 171-8393P
- Mfr. Part No.:
- NTTFS4C02NTAG
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£49.20
(exc. VAT)
£59.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 225 | £0.492 |
| 250 + | £0.426 |
*price indicative
- RS Stock No.:
- 171-8393P
- Mfr. Part No.:
- NTTFS4C02NTAG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 29 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | WDFN | |
| Series | NTTFS4C02N | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 4.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 3.15mm | |
| Width | 3.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 20 nC @ 4.5 V | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type WDFN | ||
Series NTTFS4C02N | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 4.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 3.15mm | ||
Width 3.15mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 20 nC @ 4.5 V | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
Power MOSFET 30V 170A 2.25 mOhm Single N−Channel μ8FL
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free
Applications
DCDC Converters
Power Load Switch
Notebook Battery Management
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free
Applications
DCDC Converters
Power Load Switch
Notebook Battery Management