Toshiba P-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-723 SSM3J15FV
- RS Stock No.:
- 171-2532
- Mfr. Part No.:
- SSM3J15FV
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 171-2532
- Mfr. Part No.:
- SSM3J15FV
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 100 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-723 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 32 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.7V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 150 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 1.2mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 0.8mm | |
| Height | 0.5mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 100 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-723 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 32 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.7V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 150 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 1.2mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 0.8mm | ||
Height 0.5mm | ||
- COO (Country of Origin):
- JP
Optimum for high-density mounting in small packages
Low on-resistance : RDS(ON) = 12 Ω (max) (@VGS = −4 V)
RDS(ON) = 32 Ω (max) (@VGS = −2.5 V)
Low on-resistance : RDS(ON) = 12 Ω (max) (@VGS = −4 V)
RDS(ON) = 32 Ω (max) (@VGS = −2.5 V)