Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU
- RS Stock No.:
- 171-2516
- Mfr. Part No.:
- SSM6N43FU
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 171-2516
- Mfr. Part No.:
- SSM6N43FU
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 500 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 1.52 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.35V | |
| Maximum Power Dissipation | 200 mW | |
| Maximum Gate Source Voltage | ±10 V | |
| Typical Gate Charge @ Vgs | 1.23 nC @ 4 V | |
| Length | 2mm | |
| Width | 1.25mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Height | 0.9mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 500 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1.52 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.35V | ||
Maximum Power Dissipation 200 mW | ||
Maximum Gate Source Voltage ±10 V | ||
Typical Gate Charge @ Vgs 1.23 nC @ 4 V | ||
Length 2mm | ||
Width 1.25mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Height 0.9mm | ||
- COO (Country of Origin):
- TH
1.5-V drive
Low ON-resistance RDS(ON) = 1.52 Ω (max) (@VGS = 1.5V)
RDS(ON) = 1.14 Ω (max) (@VGS = 1.8V)
RDS(ON) = 0.85 Ω (max) (@VGS = 2.5V)
RDS(ON) = 0.66 Ω (max) (@VGS = 4.5V)
RDS(ON) = 0.63 Ω (max) (@VGS = 5.0V)
Low ON-resistance RDS(ON) = 1.52 Ω (max) (@VGS = 1.5V)
RDS(ON) = 1.14 Ω (max) (@VGS = 1.8V)
RDS(ON) = 0.85 Ω (max) (@VGS = 2.5V)
RDS(ON) = 0.66 Ω (max) (@VGS = 4.5V)
RDS(ON) = 0.63 Ω (max) (@VGS = 5.0V)