Toshiba N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 SSM3K335R,LF(B

Stock information currently inaccessible
RS Stock No.:
171-2400
Mfr. Part No.:
SSM3K335R,LF(B
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

56 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

2.7 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.7mm

Forward Diode Voltage

1.2V

COO (Country of Origin):
TH
4.5-V gate drive voltage.

Low drain-source on-resistance

RDS(ON) = 38 mΩ (max) (@VGS = 10 V)

RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)

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