Infineon OptiMOS™ 5 N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON BSC070N10NS5ATMA1
- RS Stock No.:
- 171-1963
- Mfr. Part No.:
- BSC070N10NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£8.41
(exc. VAT)
£10.09
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 4,200 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.841 | £8.41 |
| 50 - 90 | £0.673 | £6.73 |
| 100 - 240 | £0.631 | £6.31 |
| 250 - 490 | £0.589 | £5.89 |
| 500 + | £0.547 | £5.47 |
*price indicative
- RS Stock No.:
- 171-1963
- Mfr. Part No.:
- BSC070N10NS5ATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TDSON | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 10.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Length | 5.49mm | |
| Width | 6.35mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TDSON | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 10.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Length 5.49mm | ||
Width 6.35mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1.1V | ||
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC070N10NS5ATMA1
- onsemi PowerTrench N-Channel MOSFET 80 V, 8-Pin PQFN8 FDMS86300
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC340N08NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC123N08NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC047N08NS3GATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin TDSON BSC040N08NS5ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 8-Pin TDSON BSC030N08NS5ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 8-Pin TDSON BSC025N08LS5ATMA1