N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
- RS Stock No.:
- 171-1955
- Mfr. Part No.:
- IPB020N10N5ATMA1
- Brand:
- Infineon
6955 In stock - FREE next working day delivery available
Price Each (In a Pack of 5)
£7.452
(exc. VAT)
£8.942
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £7.452 | £37.26 |
| 25 - 95 | £6.342 | £31.71 |
| 100 - 245 | £5.49 | £27.45 |
| 250 - 495 | £5.206 | £26.03 |
| 500 + | £4.666 | £23.33 |
*price indicative
- RS Stock No.:
- 171-1955
- Mfr. Part No.:
- IPB020N10N5ATMA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on).
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 43% from previous generation
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 43% from previous generation
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 176 A |
| Maximum Drain Source Voltage | 100 V |
| Series | OptiMOS™ 5 |
| Package Type | TO 263 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Width | 11.05mm |
| Typical Gate Charge @ Vgs | 168 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Length | 10.31mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 4.57mm |
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