Infineon OptiMOS™ 5 N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 IPB020N10N5ATMA1
- RS Stock No.:
- 170-2293
- Mfr. Part No.:
- IPB020N10N5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£2,171.00
(exc. VAT)
£2,605.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £2.171 | £2,171.00 |
*price indicative
- RS Stock No.:
- 170-2293
- Mfr. Part No.:
- IPB020N10N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 176 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS™ 5 | |
| Package Type | TO 263 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Length | 10.31mm | |
| Width | 11.05mm | |
| Typical Gate Charge @ Vgs | 168 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.57mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 176 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 5 | ||
Package Type TO 263 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 10.31mm | ||
Width 11.05mm | ||
Typical Gate Charge @ Vgs 168 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
The Infineon IPB020N10N5 is optiMOS 5 100V power MOSFET in D2PAK package with 22% lower RDS(on). Its especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
Ideal for high switching frequency
Output capacitance reduction of up to 44%
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