Infineon OptiMOS™ 5 N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 IPB020N10N5ATMA1

Subtotal (1 reel of 1000 units)*

£2,171.00

(exc. VAT)

£2,605.00

(inc. VAT)

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RS Stock No.:
170-2293
Mfr. Part No.:
IPB020N10N5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

11.05mm

Length

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

4.57mm

Forward Diode Voltage

1.2V

The Infineon IPB020N10N5 is optiMOS 5 100V power MOSFET in D2PAK package with 22% lower RDS(on). Its especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications.

Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%

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