N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120
- RS Stock No.:
- 168-8966
- Mfr. Part No.:
- SCT30N120
- Brand:
- STMicroelectronics
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Added
Price Each (In a Tube of 30)
£15.56
(exc. VAT)
£18.67
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 + | £15.56 | £466.80 |
| *price indicative | ||
- RS Stock No.:
- 168-8966
- Mfr. Part No.:
- SCT30N120
- Brand:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | HiP247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 270 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -10 V, +25 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +200 °C |
| Length | 15.75mm |
| Typical Gate Charge @ Vgs | 105 nC @ 20 V |
| Number of Elements per Chip | 1 |
| Width | 5.15mm |
| Height | 20.15mm |
| Forward Diode Voltage | 3.5V |
| Minimum Operating Temperature | -55 °C |