Texas Instruments FemtoFET N-Channel MOSFET, 3.1 A, 30 V, 3-Pin PICOSTAR CSD17381F4T
- RS Stock No.:
- 168-4358
- Mfr. Part No.:
- CSD17381F4T
- Brand:
- Texas Instruments
Subtotal (1 reel of 250 units)*
£105.25
(exc. VAT)
£126.25
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 05 December 2025
Units | Per unit | Per Reel* |
---|---|---|
250 - 250 | £0.421 | £105.25 |
500 - 1000 | £0.379 | £94.75 |
1250 - 2250 | £0.358 | £89.50 |
2500 + | £0.341 | £85.25 |
*price indicative
- RS Stock No.:
- 168-4358
- Mfr. Part No.:
- CSD17381F4T
- Brand:
- Texas Instruments
Select all | Attribute | Value |
---|---|---|
Brand | Texas Instruments | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.1 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | PICOSTAR | |
Series | FemtoFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 250 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.1V | |
Minimum Gate Threshold Voltage | 0.65V | |
Maximum Power Dissipation | 500 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Width | 0.64mm | |
Number of Elements per Chip | 1 | |
Length | 1.04mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 1.04 nC @ 4.5 V | |
Minimum Operating Temperature | -55 °C | |
Height | 0.35mm | |
Select all | ||
---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.1 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PICOSTAR | ||
Series FemtoFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 0.64mm | ||
Number of Elements per Chip 1 | ||
Length 1.04mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 1.04 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.35mm | ||
- COO (Country of Origin):
- MY
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
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