Nexperia N-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 PMV55ENEAR
- RS Stock No.:
- 151-3187
- Mfr. Part No.:
- PMV55ENEAR
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 25 units)*
£5.425
(exc. VAT)
£6.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,925 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.217 | £5.43 |
| 250 - 600 | £0.118 | £2.95 |
| 625 - 1225 | £0.115 | £2.88 |
| 1250 - 2475 | £0.112 | £2.80 |
| 2500 + | £0.109 | £2.73 |
*price indicative
- RS Stock No.:
- 151-3187
- Mfr. Part No.:
- PMV55ENEAR
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.1 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 120 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.7V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 8.36 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Length | 3mm | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 12.7 Nc @ 10 V | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 120 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.7V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 8.36 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 3mm | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 12.7 Nc @ 10 V | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
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