onsemi N-Channel MOSFET, 6.3 A, 30 V, 3-Pin SOT-223 FDT439N

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Subtotal (1 reel of 4000 units)*

£884.00

(exc. VAT)

£1,060.00

(inc. VAT)

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4000 +£0.221£884.00

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RS Stock No.:
166-2704
Mfr. Part No.:
FDT439N
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

6.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

10.7 nC @ 4.5 V

Length

6.5mm

Number of Elements per Chip

1

Width

3.56mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.6mm

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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