onsemi N-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NDS331N

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Subtotal (1 reel of 3000 units)*

£342.00

(exc. VAT)

£411.00

(inc. VAT)

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Per Reel*
3000 +£0.114£342.00

*price indicative

RS Stock No.:
166-1810
Mfr. Part No.:
NDS331N
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

+8 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Width

1.4mm

Length

2.92mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.94mm

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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