N-Channel MOSFET, 46 A, 60 V, 8-Pin TDSON Infineon BSC097N06NSATMA1

RS Stock No.:: 166-1198
Mfr. Part No.:: BSC097N06NSATMA1
Brand:: Infineon

N-Channel MOSFET, 46 A, 60 V, 8-Pin TDSON Infineon BSC097N06NSATMA1

Price Each (On a Reel of 5000)

£0.426

(exc. VAT)

£0.511

(inc. VAT)

4400 In stock - FREE next working day delivery available

Units	Per unit	Per Reel*
5000 +	£0.426	£2,130.00

*price indicative

RS Stock No.:: 166-1198
Mfr. Part No.:: BSC097N06NSATMA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: MY

Product Details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	46 A
Maximum Drain Source Voltage	60 V
Series	OptiMOS™
Package Type	TDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	14.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.3V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	36 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	12 nC @ 10 V
Length	5.35mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	6.1mm
Forward Diode Voltage	1.2V
Height	1.1mm
Minimum Operating Temperature	-55 °C