Infineon OptiMOS™ -T2 N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK IPD100N04S402ATMA1
- RS Stock No.:
- 166-0799
- Mfr. Part No.:
- IPD100N04S402ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£2,020.00
(exc. VAT)
£2,425.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.808 | £2,020.00 |
*price indicative
- RS Stock No.:
- 166-0799
- Mfr. Part No.:
- IPD100N04S402ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS™ -T2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.41mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ -T2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.41mm | ||
Forward Diode Voltage 1.3V | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- MY
Infineon OptiMOS™ T2 Power MOSFETs
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD100N04S402ATMA1
- Vishay N-Channel MOSFET 40 V, 3-Pin DPAK SQD40020E_GE3
- Vishay N-Channel MOSFET 40 V, 3-Pin DPAK SQD40020EL_GE3
- Toshiba N-Channel MOSFET 40 V, 3-Pin DPAK TK100S04N1L
- Vishay N-Channel MOSFET 40 V, 3-Pin DPAK SQR40020ER_GE3
- Vishay SQ Rugged N-Channel MOSFET 40 V, 3-Pin DPAK SQD100N04-3M6L_GE3
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin DPAK IPD100N06S403ATMA2
- Vishay Siliconix TrenchFET P-Channel MOSFET 40 V, 3-Pin DPAK SQD40061EL_GE3