Nexperia Dual N-Channel MOSFET, 350 mA, 30 V, 6-Pin SOT-363 NX3008NBKS,115
- RS Stock No.:
- 165-8662
- Mfr. Part No.:
- NX3008NBKS,115
- Brand:
- Nexperia
Subtotal (1 reel of 3000 units)*
£258.00
(exc. VAT)
£309.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 18,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.086 | £258.00 |
*price indicative
- RS Stock No.:
- 165-8662
- Mfr. Part No.:
- NX3008NBKS,115
- Brand:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 350 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 2.8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 445 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 1.35mm | |
| Number of Elements per Chip | 2 | |
| Length | 2.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 0.52 nC @ 4.5 V | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 350 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 2.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 445 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 1.35mm | ||
Number of Elements per Chip 2 | ||
Length 2.2mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 0.52 nC @ 4.5 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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