Infineon HEXFET N-Channel MOSFET, 5.8 A, 25 V, 3-Pin SOT-23 IRFML8244TRPBF
- RS Stock No.:
- 165-7765
- Mfr. Part No.:
- IRFML8244TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£195.00
(exc. VAT)
£234.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 54,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.065 | £195.00 |
| 6000 - 6000 | £0.062 | £186.00 |
| 9000 + | £0.058 | £174.00 |
*price indicative
- RS Stock No.:
- 165-7765
- Mfr. Part No.:
- IRFML8244TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.8 A | |
| Maximum Drain Source Voltage | 25 V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 41 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3.04mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 5.4 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.8 A | ||
Maximum Drain Source Voltage 25 V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 41 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.04mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 5.4 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.4mm | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
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