N-Channel MOSFET, 8.1 A, 500 V, 3-Pin D2PAK Vishay SIHF840STRL-GE3

RS Stock No.:: 165-5999
Mfr. Part No.:: SIHF840STRL-GE3
Brand:: Vishay

N-Channel MOSFET, 8.1 A, 500 V, 3-Pin D2PAK Vishay SIHF840STRL-GE3

Available to back order for despatch 24/09/2024

Estimated Total Price (800 Units)

£841.60

(exc. VAT)

£1,009.60

(inc. VAT)

Units	Per unit	Per Reel*
800 +	£1.052	£841.60
*price indicative

RS Stock No.:: 165-5999
Mfr. Part No.:: SIHF840STRL-GE3
Brand:: Vishay

IRF840S, SiHF840S, Power MOSFET
ESD Control Selection Guide V1

RS Stock No.:: 165-5999
Mfr. Part No.:: SIHF840STRL-GE3
Brand:: Vishay

IRF840S, SiHF840S, Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8.1 A
Maximum Drain Source Voltage	500 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	850 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	10.67mm
Transistor Material	Si
Width	9.65mm
Typical Gate Charge @ Vgs	63 nC @ 10 V
Height	4.83mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8.1 A
Maximum Drain Source Voltage	500 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	850 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	10.67mm
Transistor Material	Si
Width	9.65mm
Typical Gate Charge @ Vgs	63 nC @ 10 V
Height	4.83mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 8.1 A, 500 V, 3-Pin D2PAK Vishay SIHF840STRL-GE3

N-Channel MOSFET, 500V, Vishay Semiconductor

N-Channel MOSFET, 500V, Vishay Semiconductor

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