STMicroelectronics STripFET F6 N-Channel MOSFET, 120 A, 40 V, 3-Pin H2PAK STH175N4F6-2AG
- RS Stock No.:
- 165-5563
- Mfr. Part No.:
- STH175N4F6-2AG
- Brand:
- STMicroelectronics
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 165-5563
- Mfr. Part No.:
- STH175N4F6-2AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | STripFET F6 | |
| Package Type | H2PAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.17mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 4.8mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Series STripFET F6 | ||
Package Type H2PAK | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.17mm | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Transistor Material Si | ||
Height 4.8mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel STripFET™ F6, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics STripFET F6 N-Channel MOSFET 40 V, 3-Pin H2PAK STH175N4F6-2AG
- STMicroelectronics STripFET H7 N-Channel MOSFET 80 V, 3-Pin H2PAK-2 STH270N8F7-2
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 3-Pin H2PAK-2 STH310N10F7-2
- STMicroelectronics STripFET F6 Silicon P-Channel MOSFET 60 V, 3-Pin DPAK STD35P6LLF6
- STMicroelectronics STripFET F7 N-Channel MOSFET 40 V, 6 + Tab-Pin H2PAK STH410N4F7-6AG
- STMicroelectronics DeepGate 110 A 3-Pin H2PAK-2 STH150N10F7-2
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 7-Pin H2PAK-6 STH310N10F7-6
- STMicroelectronics STripFET N-Channel MOSFET 40 V, 3-Pin TO-220 STP200NF04