onsemi P-Channel MOSFET, 1.5 A, 8 V, 3-Pin SOT-323 NTS2101PT1G
- RS Stock No.:
- 163-1139
- Mfr. Part No.:
- NTS2101PT1G
- Brand:
- onsemi
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 163-1139
- Mfr. Part No.:
- NTS2101PT1G
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 1.5 A | |
Maximum Drain Source Voltage | 8 V | |
Package Type | SOT-323 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 210 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.45V | |
Maximum Power Dissipation | 330 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Length | 2.2mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 6.4 nC @ 5 V | |
Width | 1.35mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Height | 0.9mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 8 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 330 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Length 2.2mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 6.4 nC @ 5 V | ||
Width 1.35mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 0.9mm | ||
Minimum Operating Temperature -55 °C | ||
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