Wolfspeed SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 C2M0160120D

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Subtotal (1 tube of 30 units)*

£336.81

(exc. VAT)

£404.16

(inc. VAT)

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30 +£11.227£336.81

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RS Stock No.:
162-9709
Mfr. Part No.:
C2M0160120D
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

196 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +20 V

Length

16.13mm

Number of Elements per Chip

1

Width

5.21mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

34 nC @ 20 V, 34 nC @ 5 V

Height

21.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.3V

COO (Country of Origin):
CN

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation


MOSFET Transistors, Wolfspeed

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